Gallium nitride (GaN) power devices are redefining the limits of switching converters by combining wide bandgap physics with lateral HEMT structures optimized for fast, low-loss operation. This ...

GaN devices are gaining traction due to their ability to tolerate higher voltages. New approaches such as chiplets offer faster switching with less loss. The first applications to benefit from GaN ...

A 650-V GaN intelligent power module (IPM) from TI enables up to 99% inverter efficiency for major home appliances and HVAC systems. The DRV7308 IPM integrates 650-V, 205-mΩ e-mode GaN FETs in a half ...

EL SEGUNDO, Calif.--(BUSINESS WIRE)--Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s ...

The need to mitigate climate change is driving a need to electrify our infrastructure, vehicles, and appliances, which can then be charged and powered by renewable energy sources. The most visible and ...

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...

GaN-inspired advances in on-board battery chargers. How AlGaN/GaN HEMTs deliver high switching frequencies. Buck converter reference design for 48-V apps that leverages GaN FETs. Electric vehicles ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new 16W-average-power gallium nitride (GaN) power amplifier module (PAM) ...

(MENAFN- GlobeNewsWire - Nasdaq) Key market opportunities exist in the rapid growth and deployment of advanced SiC and GaN power devices within new energy vehicles, driven by increasing sales of 800V+ ...

The "Automotive-Grade Power Semiconductor and Module (SiC, GaN) Industry Research Report, 2025" has been added to ResearchAndMarkets.com's offering. SiC/GaN research indicates a significant uptick in ...